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| polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high F t enhance broadband performance TM F1240 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 40 Watts Single Ended Package Style AT HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE ABSOLUTE MAXIMUM RATINGS (TC = 25 C) Total Device Dissipation 120 Watts Junction to Case Thermal Resistance 1.5 o C/W Maximum Junction Temperature 200 o C Storage Temperature DC Drain Current Drain to Gate Voltage 50 V Drain to Source Voltage 50 V Gate to Source Voltage 30V o -65 o C to 150o C 6A RF CHARACTERISTICS ( SYMBOL Gps PARAMETER Common Source Pow er Gain Drain Efficiency Load Mismatch Tolerance MIN 10 60 TYP 40WATTS OUTPUT ) MAX UNITS dB % 20:1 Relative TEST CONDITIONS Idq = 1.2 A, Vds = 12.5 V, F = 175 MHz Idq = 1.2 A, Vds = 12.5 V, F = 175 MHz Idq = 1.2 A, Vds = 12.5 V, F = 175 MHz VSWR ELECTRICAL CHARACTERISTICS (EACH SIDE) SYMBOL Bvdss Idss Igss Vgs gM Rdson Idsat Ciss Crss Coss PARAMETER Drain Breakdow n Voltage Zero Bias Drain Current Gate Leakage Current Gate Bias for Drain Current Forw ard Transconductance Saturation Resistance Saturation Current Common Source Input Capacitance Common Source Feedback Capacitance Common Source Output Capacitance 1 2.4 0.35 22.5 120 18 90 MIN 40 3 1 7 TYP MAX UNITS V mA uA V Mho Ohm Amp pF pF pF TEST CONDITIONS Ids = 0.15 A, Vds = 12.5 V, Vds = 0 V, Ids = 0.3 A, Vgs = 0V Vgs = 0V Vgs = 30V Vgs = Vds Vds = 10V, Vgs = 5V Vgs = 20V, Ids = 24 A Vgs = 20V, Vds = 10V Vds = 12.5 V, Vgs = 0V, F = 1 MHz Vds = 12.5 V, Vgs = 0V, F = 1 MHz Vds = 12.5 V, Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 8/1/97 1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:w w w .polyfet.com F1240 POUT VS PIN GRAPH F1240 POUT VS PIN F=175 MHZ; IDQ=1.2A; VDS=12.5V 45 40 35 30 25 20 15 10 0 1 2 3 4 5 P OUT CAPACITANCE VS VOLTAGE F1C 3DI E CAPACITANCE 1000 23. 0 0 21. 0 0 19. 0 0 Efficiency = 65% 17. 0 0 100 Coss Ciss 15. 0 0 13. 0 0 11. 0 0 9.00 6 GAIN 10 0 5 10 15 VDS IN VOLTS Crss 20 25 30 P IN IN WATT S IV CURVE F1C 3 D IE I V CURVE 25 100 ID AND GM VS VGS F1C 3 DIE GM & ID vs VGS 20 Id 15 10 10 Gm 1 5 0 0 2 4 6 8 10 Vds in Volts 12 14 16 18 20 0.1 0 2 4 6 Vgs in Volts 8 10 12 14 Vg = 2V Vg = 4V Vg = 6V Vg = 8V Vg = 10V Vg = 12V S11 AND S22 SMITH CHART PACKAGE DIMENSIONS IN INCHES Tolerance 0.XX +/- 0.01 0.XXX +/- 0.005 inches POLYFET RF DEVICES REVISION 8/1/97 1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:w w w .polyfet.com |
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